Effects of low-temperature annealing on oxygen precipitate nucleation in heavily arsenic-doped Czochralski silicon; 研究了五种不同的热处理气氛对直拉硅中氧沉淀及其诱生缺陷的影响。
It has been found the SIMOX structures formed by low-temperature annealing differ from that by high-temperature annealing ( 1100 ℃). 低温退火制备的SIMOX结构与高温(1100℃)退火制备的有明显不同。
A flexible 8-bit asynchronous microprocessor based on low-temperature poly-silicon ( LTPS) TFT technology, surface free technology by laser annealing and ablation ( SUFTLA) and asynchronous circuit description language Verilog+ is presented. 介绍基于低温多晶硅TFT技术和采用激光退火表面刻蚀技术的柔性8位异步微处理器,并且给出了异步电路描述语言Verilog+。
Through the low-temperature photoluminescence spectrometer ( LTPL) and electron paramagnetic resonance spectroscopy ( EPR), the point defects of SiC crystal with the annealing temperature change have been investigated. 通过低温光致发光谱仪(LTPL)、电子顺磁共振谱仪(EPR)对SiC晶体的点缺陷随温度的变化进行分析。
Low-temperature annealing can improve the crystalline structure and magnetic properties of films. 低温退火可以提高薄膜的质量并且增强薄膜的磁性。
According to the logarithmic rate law which was proposed for the low-temperature oxidation, the barrier thickness will become thicker as the annealing time increases. 依据低温下氧化物生长的对数速率法则,退火时间越长,扩散阻挡层的厚度越厚。